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International Affairs Students Current Students Alumni Faculty/Staff Careers--> TOHOKU UNIVERSITYCREATING GLOBAL EXCELLENCE Search 日本語 Contact Tohoku University --> About Facts & Figures Facilities Organization Chart History President's Message Top Global University Project Designated National University Global Network Promotional Videos Academics Undergraduate Graduate Courses in English Exchange Programs Summer Programs Double Degree Programs Academic Calendar Syllabus Admissions Undergraduate Admissions Graduate Admissions Fees and Expenses Financial Aid Research Feature Highlights Research Releases University Research News Research Institutes Visitor Research Center Research Profiles Academic Research Staff Campus Life International Support Office IT Services Facilities Dining & Shops Campus Bus Clubs & Circles News University News Research--> Arts & Culture Health & Sports Campus & Community Press Release--> International Visit Alumni Careers Events Exhibits Music Special Event Lecture Alumni--> Map & Directions Campus Maps & Bus--> Facilities Map--> TOHOKUUNIVERSITY About Academics Admissions Research Campus Life News Events International Affairs Students Current Students Alumni Faculty/Staff Promotional Videos Subscribe to our Newsletter Map & Directions Contact Jobs & Vacancies Emergency Information Site Map 日本語 Close Home Research News Researchers Succeed in High-Sensitivity Terahertz Detection by 2D Plasmons in Transistors Research News Researchers Succeed in High-Sensitivity Terahertz Detection by 2D Plasmons in Transistors 2023-12-27 A research group has developed a high-speed, high-sensitivity terahertz-wave detector operating at room temperature, paving the way for advancements in the development of next generation 6G/7G technology. Details of their breakthrough were published in the journal Nanophotonics on November 9, 2023. The enhancement of current communications speeds will rely on terahertz (THz) waves. THz waves are electromagnetic waves within the THz range, which falls between the microwave and infrared portions of the electromagnetic spectrum, typically spanning frequencies from 300 gigahertz to 3 THz. Still, the fast and sensitive detection of THz waves at room temperature is challenging for conventional electronic- or photonic-based semiconductor devices. This is where two-dimensional plasmons come in. In a semiconductor field-effect transistor, there is a two-dimensional electron channel where a collective charge-density quanta, i.e., two-dimensional plasmons, exist. These plasmons are excited states of electrons exhibiting fluid-like behaviors. Their nonlinear rectification effects, originating from these fluid-like behaviors, and their rapid response (not constrained by electron transit time) make them a promising means to detect THz waves at room temperature. A bird's-eye view of the device structure and electron micrographs of the device surface. G1: gate 1 electrode, G2: gate 2 electrode, D: drain electrode, and S: source electrode. ©Akira Satou et al. "We discovered a 3D plasmonic rectification effect in THz wave detector," says Akira Satou, leader of the research group and associate professor at Tohoku University's Research Institute for Electrical Communication (RIEC). "The detector was based on an indium-phosphide high-electron mobility transistor and it enabled us to enhance the detection sensitivity more than one order of magnitude higher than conventional detectors based on 2D plasmons." The new detection method combined the traditional vertical hydrodynamic nonlinear rectification effect of 2D plasmons with the addition of a vertical diode-current nonlinearity. It also dramatically resolved the waveform distortion caused by multiple reflections of high-speed modulated signals - a critical issue in conventional detectors based on 2D plasmons. A Schematic view of the 3D rectification effect in the device. ©Akira Satou et al. Leading the group alongside Satou was Specially Appointed Professor Tetsuya Suemitsu from Tohoku University's New Industry Creation Hatchery Center and Hiroaki Minamide from RIKEN Center for Advanced Photonics. "Our new detection mechanism overcomes most of the bottlenecks in conventional terahertz-wave detectors," adds Satou. "Looking ahead, we hope to build on our achievement by improving the device performance." Measured photo response waveforms of the device upon THz-wave pulse incidence at different gate biases (left panel) and measured current detection sensitivity on gate bias (right panel). ©Akira Satou et al. Publication Details: Title: Gate-Readout and a 3D Rectification Effect for Giant Responsivity Enhancement of Asymmetric Dual-Grating-Gate Plasmonic Terahertz DetectorsAuthors: Akira Satou, Takumi Negoro, Kenichi Narita, Tomotaka Hosotani, Koichi Tamura, Chao Tang, Tsung-Tse Lin, Paul-Etienne Retaux, Yuma Takida, Hiroaki Minamide, Tetsuya Suemitsu, and Taiichi OtsujiJournal: NanophotonicsDOI: 10.1515/nanoph-2023-0256 Press release in Japanese Contact: Akira Satou,Research Institute of Electrical Communication, Tohoku University Email: akira.satou.d2tohoku.ac.jpWebsite: https://www.otsuji.riec.tohoku.ac.jp/english/index_en.php --> Archives 2014&＃24180; 2015&＃24180; 2016&＃24180; 2017&＃24180; 2018&＃24180; 2019&＃24180; 2020&＃24180; 2021&＃24180; 2022&＃24180; 2023&＃24180; Page Top About Tohoku University Academics Admissions Research Campus Life News Events International Affairs Students Alumni Promotional Videos Subscribe to our Newsletter Map & Directions Contact Tohoku University Jobs & Vacancies Emergency Information Site Map Privacy Policy Media Enquiries Parent & Family Support Public Facilities Contact Tohoku University